A semi-floating gate AlGaN/GaN HEMT for normally-off operation
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference28 articles.
1. Suppression of gate leakage current in ka-band AlGaN/GaN HEMT with 5-nm SiN gate dielectric grown by plasma-enhanced ALD;Zhang;IEEE Trans. Electron. Dev.,2021
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3. Physical insights into the impact of surface traps on breakdown characteristics of AlGaN/GaN HEMTs--Part I;Joshi;IEEE Trans. Electron. Dev.,2021
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of back barrier material effects on the scalability of Fe-doped recess-gated AlN/GaN HEMTs for next generation RF power electronics;Micro and Nanostructures;2022-11
2. First-principles investigation of the effect of noble metals on the electronic and optical properties of GaN nitride;Materials Science in Semiconductor Processing;2022-11
3. Demonstration of Normally-OFF recessed MIS-Gate technique on AlGaN/GaN HEMT for improved power dissipation;Materials Today: Proceedings;2022
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