Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT-Reference-Cited by-同舟云学术

Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT

Published:2022-07 Issue: Volume:145 Page:106627
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Singh R.,Lenka T.R.^ORCID,Panda D.K.,Nguyen H.P.T.,Boukortt N. El I.^ORCID,Crupi G.^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

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3. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics;Higashiwaki;Appl. Phys. Lett.,2013

4. 3.8-MV/cm breakdown strength of MOVPE-grown Sn-doped β-Ga2O3 MOSFETs;Green;IEEE Electron. Device Lett.,2016

5. beta-Ga 2 O 3 delta-doped field-effect transistors with current gain cutoff frequency of 27 GHz;Xia;IEEE Electron. Device Lett.,2019

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