Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference37 articles.
1. Dimensioning for power and performance under10 nm: the limits of FinFETs scaling;Bardon;Proc. ICICDT,2015
2. Challenges of 10 nm and 7 nm CMOS for server and mobile applications;Divakaruni;ECS Trans.,2016
3. N. Loubet, et al., Stacked nanosheet gate-all_around transistor to enable scaling beyond FinFET, in: Proceedings of IEEE Symposium on VLSI Technology Digest of Technical Papers, 2017.
4. Device exploration of nanosheet transistors for sub-7-nm technology node;Jang;IEEE Trans. Electron Devices,2017
5. Vertically integrated multiple nanowire field effect transistor;Lee;Nano Lett.,2015
Cited by
42 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献