Junction temperature and reliability of high-power flip-chip light emitting diodes-Reference-Cited by-同舟云学术

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Junction temperature and reliability of high-power flip-chip light emitting diodes

Published:2007-08 Issue:4-5 Volume:10 Page:206-210
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Chen Z.Z.,Liu P.,Qi S.L.,Lin L.,Pan H.P.,Qin Z.X.,Yu T.J.,He Z.K.,Zhang G.Y.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method

2. Solid-state lighting

3. Effect of chip and bonding defects on the junction temperatures of high-brightness light-emitting diodes

4. Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress

5. Imaging Joule heating in a conjugated-polymer light-emitting diode using a scanning thermal microscope

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4. Effect of Transient and Steady-State Current on the Photothermal Performance of a UVC-LED;Journal of Electronic Materials;2021-11-11

5. Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels;RSC Advances;2019

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