Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD-Reference-Cited by-同舟云学术

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Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD

Published:2016-12 Issue: Volume:56 Page:277-281
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Patil V.S.,Agrawal K.S.,Khairnar A.G.,Thibeault B.J.,Mahajan A.M.

Funder

Department of Science & Technology, New Delhi

DST

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Germanium channel MOSFETs: Opportunities and challenges

2. High-k/Ge MOSFETs for future nanoelectronics

3. Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics

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1. A review on potential use of cerium oxide and doped cerium oxide as high dielectric constant seed layers for overgrowth of cerium oxide nanostructures;Materials Research Express;2024-06-01

2. Growth and characterization of Peald deposited La₂O₃ on SiO₂/Si;International Journal of Modern Physics B;2024-01-11

3. Investigation of PEALD ZrO2/La2O3-based high-k nanolaminates sandwiched between Al and Ti electrodes for MIM capacitors;Journal of Materials Science: Materials in Electronics;2023-06

4. Investigation of incorporating CeO2 seed layer for overgrowth of Green synthesized CeO2 nanostructures deposited on Si (111) substrate;Journal of Materials Science: Materials in Electronics;2023-03

5. The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors;Journal of Materials Science: Materials in Electronics;2022-04-18

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