Introducing a supercritical fluid technique to reduce passivation layer interface defects in passivated emitter rear contact cells-Reference-Cited by-同舟云学术

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Introducing a supercritical fluid technique to reduce passivation layer interface defects in passivated emitter rear contact cells

Published:2022-01 Issue: Volume:137 Page:106217
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Yang Chih Cheng,Chou Sheng Yao,Chen Min Chen,Lin Shih Kai,Chen Sung Yu,Liu Shui Chin,Wang Kao Yuan,Tsai Tsung Ming,Huang Jen Wei,Chang Ting Chang

Funder

Bureau of Energy, Ministry of Economic Affairs, Republic of Taiwan

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Hydrogen passivation of polysilicon mosfets from a plasma nitride source;Pollack;IEEE Electron. Device Lett.,1984

2. Deep levels introduced into silicon during hydrogen plasma annealing;Hwang;J. Appl. Phys.,1985

3. Al/poly si specific contact resistivity;Ford;IEEE Electron. Device Lett.,1983

4. The influence on electrical performance of double-polysilicon bipolar transistors by forming gas annealing;Sanden;Phys. Scripta,1999

5. Physics of bsf solar-cells at high-levels of illumination;Dhariwal;IEEE Electron. Device Lett.,1983

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