The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography-Reference-Cited by-同舟云学术

The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography

Published:2015-02 Issue: Volume:30 Page:393-399
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Korucu D.,Duman S.,Turut A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference53 articles.

1. Physics and Chemistry of III–V Compound Semiconductor Interfaces;Williams,1985

2. A model for capacitance reconstruction from measured lossy MOS capacitance voltage characteristics

3. Electron transport of inhomogeneous Schottky barriers: A numerical study

4. Recent advances in Schottky barrier concepts

5. Metal-Oxide Semiconductor (MOS) Physics and Technology;Nicollian,1982

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