Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure-Reference-Cited by-同舟云学术

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Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Published:2014-01 Issue: Volume:17 Page:74-80
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Deok Yang Hyeon,Kil Yeon-Ho,Yang Jong-Han,Kang Sukill,Soo Jeong Tae,Choi Chel-Jong,Sung Kim Taek,Shim Kyu-Hwan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference41 articles.

1. Activation and carrier mobility in high fluence B implanted germanium

2. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

3. On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications

4. High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding

5. High-speed interdigitated Ge PIN photodetectors

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3. Transparent conductor-embedding high-sensitive germanium NIR photodetector;Materials Science in Semiconductor Processing;2016-06

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5. Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p + n Diodes;Journal of Electronic Materials;2015-09-24

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