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III–V nanocrystal formation in ion-implanted Ge and Si via liquid phase epitaxy during short-time flash lamp annealing

  • Published:2016-02 Issue: Volume:42 Page:166-169
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Wutzler Rene,Rebohle Lars,Prucnal Slawomir,Hübner René,Facsko Stefan,Böttger Roman,Helm Manfred,Skorupa Wolfgang

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Nanometre-scale electronics with III–V compound semiconductors;del Alamo;Nature,2011

2. Advancing CMOS beyond the Si roadmap with Ge and III/V devices;Heyns;Electron Devices Meet. (IEDM),2011

3. Ultimate scaling of CMOS logic devices with Ge and III–V materials;Heyns;MRS Bull.,2009

4. Germanium based field-effect transistors: challenges and opportunities;Goley;Materials,2014

5. NItride-based semiconductors for blue and green light-emitting devices;Ponce;Nature,1997

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