Author:
Nallabala Nanda Kumar Reddy,Kushvaha Sunil Singh,Kumari A.,Singh V.R.,Verma V.K.,Kaleemulla S.,Singh Lokendra P.,Jilani S.A.K.,Vattikuti S.V. Prabhakar,Bakash K. Rahim,Sambasivam Sangaraju,Shim Jaesool
Funder
National Research Foundation of Korea
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference70 articles.
1. Analysis of anomalous transport mechanism across the interface of Ag/p-Si Schottky diode in wide temperature range;Kumar;Superlattice. Microst.,2019
2. Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN;Reddy;Mater. Sci. Semicond. Process.,2022
3. S.S. Kushvaha and V.N. Singh, Book Chapter: Types of Photodetectors and Their Applications, (Chapter 8). Pages. 241-269, Nova Science Publishers, ISBN: 978-168507775-4.
4. GaN ultraviolet Schottky barrier photodetectors with ZrO2 or SiO2 insulators;Chen;Opt. Rev.,2011
5. Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector;Reddy;Mater. Sci. Semicond. Process.,2020
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