Corrigendum to “Incorporation of N in p-type Zn–N-doped SnO2 films by varying N2 content in sputtering gas mixture” [Mater. Sci. Semiconductor Process. 155 (2023) 107230]
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Published:2023-03
Issue:
Volume:155
Page:107262
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ISSN:1369-8001
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Container-title:Materials Science in Semiconductor Processing
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language:en
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Short-container-title:Materials Science in Semiconductor Processing
Author:
Dan Ho Kim,Pham Minh Khang,Dang Huu Phuc,Quach Uy Lap,Dao Anh Tuan,Le Tran
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science