Annealing effects on electrical and optical properties of a-Si:H layer deposited by PECVD-Reference-Cited by-同舟云学术

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Annealing effects on electrical and optical properties of a-Si:H layer deposited by PECVD

Published:2015-12 Issue: Volume:40 Page:302-309
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Elghoul N.,Kraiem S.,Jemai R.,Zebentout B.,Khirouni K.

Funder

Tunisian Ministry of Higher Education and Scientific Research

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference48 articles.

1. Metal–Semiconductor Contacts;Rhoderick,1988

2. Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts

3. Current-voltage characteristics and barrier parameters of Pd2Si/p-Si(111) Schottky diodes in a wide temperature range

4. Effects of temperature on series resistance determination of electrodeposited Cr/n-Si/Au–Sb Schottky structures

5. The energy distribution of the interface state density of Pb/p-Si Schottky contacts exposed to clean room air

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