Effect of pressure annealing on structure of Si:Mn

Author:

Misiuk A.,Surma B.,Bak-Misiuk J.,Barcz A.,Jung W.,Osinniy W.,Shalimov A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. Bolduc M, Awo-Affouda C, Stollenwerk A, Huang MB, Ramos GG, Agnello G, et al. Above room temperature ferromagnetism in Mn-ion implanted Si. Phys Rev B 2005;71:033302–1–3.

2. Misiuk A, Bak-Misiuk J, Surma B, Osinniy W, Szot M, Story T, et al. Structure and magnetic ordering of Si:Mn annealed under enhanced hydrostatic pressure. J. Alloys and Compounds, accepted for publication.

3. Effect of high temperature–pressure on nitrogen doped Czochralski silicon;Misiuk;J Phys: Condens Matter,2004

4. High pressure-high temperature treatment to create oxygen nano-clusters and defects in single crystalline silicon;Misiuk;Mater Phys Mech,2000

5. Misiuk A, Surma B, Bak-Misiuk J, Wnuk A, Jagielski J. Effect of enhanced hydrostatic pressure at annealing on self-implanted silicon. In: Proceedings of the fifth international conference on advanced silicon devices and microsystems, ASDAM 2004, Smolenice Castle, Slovakia, p. 171–74.

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