Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference46 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review;Casady;High-Temperature Electron,1998
2. Subsurface damage of single crystalline silicon carbide in nanoindentation tests;Yan;J. Nanosci. Nanotechnol.,2010
3. Dislocations in 4H- and 3C-SiC single crystals in the brittle regime;Demenet;Phys. Status Solidi Curr. Top. Solid State Phys.,2013
4. Molecular dynamics simulation in single crystal 3C-SiC under nanoindentation: formation of prismatic loops;Sun;Ceram. Int.,2017
5. Characterization of polycrystalline 3C-SiC thin film diodes for extreme environment applications;Chung;Microelectron. Eng.,2008
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献