Preparation of SrRuO3 films for advanced CMOS metal gates-Reference-Cited by-同舟云学术

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Preparation of SrRuO3 films for advanced CMOS metal gates

Published:2004-01 Issue:4-6 Volume:7 Page:265-269
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Fröhlich K.,Hušeková K.,Machajdík D.,Lupták R.,Ťapajna M.,Hooker J.C.,Roozeboom F.,Kobzev A.P.,Wiemer C.,Ferrari S.,Fanciulli M.,Rossel C.,Cabral C.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Thermal stability of SrRuO3 epitaxial layers under forming-gas anneal

3. Structural Stability of (Ba,Sr)RuO 3 Electrodes on Hydrogen Annealing and Effect of interfacial Layers in (Ba,Sr)TiO 3 Thin Films

4. Metal oxide gate electrodes for advanced CMOS technology

5. Ru and RuO2 gate electrodes for advanced CMOS technology

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1. Effects of interfacial buffering layer on imprint and domain switching dynamics in Pb(Zr,Ti)O₃ thin-film heterostructures;Journal of Advanced Dielectrics;2024-01-18

2. Structural properties of ferroelectric characteristics of mixed NiTiO3-BiFeO3 thin film by the sol-gel method;Journal of Physics and Chemistry of Solids;2021-05

3. Effect of substrate type and temperature on the growth of thin Ru films by metal organic chemical vapor deposition;Materials Science in Semiconductor Processing;2017-11

4. Precise control of Schottky barrier height in SrTiO3/SrRuO3heterojunctions using ultrathin interface polar layers;Journal of Physics D: Applied Physics;2016-05-20

5. Suppressed Thermally Induced Flatband Voltage Instabilities with Binary Noble Metal Gated Metal–Oxide–Semiconductor Capacitors;Japanese Journal of Applied Physics;2012-02-20

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