Ion implantation of advanced silicon devices: Past, present and future

Author:

Current Michael I.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Design of ion-implanted MOSFETs with very small physical dimensions;Dennard;IEEE J. Solid-State Circuits,1974

2. CMOS scaling for high performance and low power-the next ten years;Davari;Proc. IEEE,1995

3. Y..Taur, C.H.Wann, D.J.Frank, 25nm CMOS Design Considerations, IEEE IEDM. Paper 29.4.3, 1998.

4. Doping fin field-effect transistor sidewalls: impurity doe retention in silicon due to high angle incident ion implants and the impact on device performance;Duffy;J. Vac. Sci. Technol.,2008

5. 3D-carrier profiling in finFETs using scanning spreading resistance microscopy;Mody;IEDM,2011

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