EPR characterization of defects in monoclinic powders of ZrO2 and HfO2
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference29 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Charge detrapping in HfO2 high-κ gate dielectric stacks
3. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
4. Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
5. Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics
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