Development of a novel wet cleaning solution for Post-CMP SiO2 and Si3N4 films-Reference-Cited by-同舟云学术

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Development of a novel wet cleaning solution for Post-CMP SiO2 and Si3N4 films

Published:2022-03 Issue: Volume:140 Page:106353
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Song Junghwan,Park Kihong,Jeon Sanghuck,Lee Jaewon,Kim Taesung

Funder

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Ministry of Education, Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference65 articles.

1. Shallow trench isolation chemical mechanical planarization;Srinivasan;A review,2015

2. Slurry additive effects on the suppression of silicon nitride removal during;America;CMP,2004

3. Polishing behaviors of ceria abrasives on silicon dioxide and silicon nitride;Oh;CMP,2011

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tailored electrostatic attraction force between anionic polymer and Si3N4 film in consecutive gate poly open CMP;Materials Science in Semiconductor Processing;2024-12

2. A review on the development of ceria for chemical mechanical polishing;Powder Technology;2024-08

3. The effect of non-ionic surfactants on the removal of cerium oxide particles in STI CMP post cleaning;Materials Science in Semiconductor Processing;2024-06

4. Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction;Sensors;2024-05-13

5. Effects of Gas-Dissolved Water for Ceria Nanoparticles on the SiO₂ Film Surface in Post-CMP Cleaning;ECS Journal of Solid State Science and Technology;2024-05-01

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