Growth of the new high-performance NLO crystal BaGa2GeSe6 via the controlled vapor pressure method-Reference-Cited by-同舟云学术

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Growth of the new high-performance NLO crystal BaGa2GeSe6 via the controlled vapor pressure method

Published:2023-07 Issue: Volume:12 Page:100465
ISSN:2666-9501
Container-title:Results in Optics
language:en
Short-container-title:Results in Optics

Author:

Wang Zhenyou^ORCID,Liu Guojin,Zhou Qiang,Mao Mingsheng,Ni Youbao,Huang Changbao,Yu Xuezhou,Wu Haixin

Funder

Natural Science Foundation of Anhui Province

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Atomic and Molecular Physics, and Optics

Reference15 articles.

1. Crystal growth and characterization of new quaternary chalcogenide nonlinear crystals for the mid-IR: BaGa2GeS6 and BaGa2GeSe6;Badikov;Opt. Mater. Express,2016

2. Intracavity-pumped, cascaded optical parametric oscillator based on BaGa2GeSe6;Boyko,2018

3. Growth and device fabrication of new infrared nonlinear optical crystal BaGa2GeSe6;Fang;J. Synth. Cryst.,2020

4. Phase-matching properties of BaGa2GeSe6 for three-wave interactions in the 0.778-10.5910 Mu M spectral range;Kato;Appl. Opt.,2018

5. Thermo-optic dispersion formula for BaGa2GeSe6;Kato;Appl. Opt.,2019

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