An investigation into EMI-induced noise in nanometer multi-quantum well InGaN LEDs-Reference-Cited by-同舟云学术

An investigation into EMI-induced noise in nanometer multi-quantum well InGaN LEDs

Published:2007-05 Issue:2 Volume:273 Page:311-319
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Tsai Han-Chang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Nanometer focusing of X-rays with modified reflection zone plates

2. Antiresonant ring interferometry as a sensitive technique for measuring nonlinear optical properties of thin films

3. Adsorbed layer etching of fused silica by excimer laser with nanometer depth precision

4. Stress-impedance effects in layered FeSiB/Cu/FeSiB films with a meander line structure

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5. Determination of the electric field distribution within multi-quantum-well light emitting diodes by the use of electron beam induced methods;2009 IEEE International Reliability Physics Symposium;2009-04