Optimized design of QD-LD toward QD-SOA to achieve 35-dB maximum chip gain with 400-mA injected current-Reference-Cited by-同舟云学术

Optimized design of QD-LD toward QD-SOA to achieve 35-dB maximum chip gain with 400-mA injected current

Published:2020-11 Issue: Volume:475 Page:126238
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Boriboon Budsara,Worasucheep Duang-rudee,Matsumoto Atsushi,Akahane Kouichi,Yamamoto Naokatsu,Wada Naoya

Funder

Chulalongkorn University

Chulalongkorn University Fund

Overseas Research Experience Scholarship

Japanese Government funding for “R&D to Expand Radio Frequency Resources”

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. InGaAs-GaAs quantum-dot lasers;Bimberg;IEEE J. Sel. Top. Quantum Electron.,1997

2. Quantum-dot semiconductor optical amplifiers;Akiyama;Proc. IEEE,2007

3. Waveguide avalanche photodetector using quantum-dot superlattice for optical fiber communications;Umezawa,2017

4. Characteristics-improvement of QD semiconductor optical amplifier using rapid-thermal annealing process;Boriboon,2018

5. The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number;Akahane,2012

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum-Dash Semiconductor Optical Amplifier for Millimeter-Wave over Fibre Wireless Fronthaul Systems;Photonics;2024-09-01

2. A novel bidirectionally operated chirped quantum-dot based semiconductor optical amplifier using a dual ground state spectrum;APL Photonics;2024-04-01

3. Performance Investigations of InAs/InP Quantum-Dash Semiconductor Optical Amplifiers with Different Numbers of Dash Layers;Micromachines;2023-12-12

4. Performances of Conventional SOAs Versus QD-SOA in 1530-nm Upstream Transmission of 40 Gb/s Access Network;IEEE Photonics Journal;2022-02

5. Laser Characteristic and Strain Distribution Dependence on Embedding Layer Thickness of Quantum Dots Laser Diodes Grown on InP(311)B Substrate;physica status solidi (a);2021-12-23