On the effects of the time gate position and width on the signal-to-noise ratio for detection of Raman spectrum in a time-gated CMOS single-photon avalanche diode based sensor-Reference-Cited by-同舟云学术

On the effects of the time gate position and width on the signal-to-noise ratio for detection of Raman spectrum in a time-gated CMOS single-photon avalanche diode based sensor

Published:2017-03 Issue: Volume:241 Page:1145-1152
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Nissinen Ilkka,Nissinen Jan,Keränen Pekka,Kostamovaara Juha

Funder

Academy of Finland

Centre of Excellence in Laser Scanning Research under

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

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