Oxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of layers on Si(100) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Epitaxial growth of CeO2layers on silicon
2. Low‐temperature epitaxial growth of cerium dioxide layers on (111) silicon substrates
3. Room-Temperature Epitaxial Growth of $\bf CeO_{2}$ Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
4. In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy
5. Epitaxial Growth ofCeO2Films on Si(111) by Sputtering
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1. CeO 2 nanocrystals and solid-phase heteroepitaxy of CeAlO 3 interlayer on Al 2 O 3 (0 0 0 1) substrate;Journal of Crystal Growth;2017-04
2. Perfect Separation of Hybrid Orientation Structure of CeO2(100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches;ECS Journal of Solid State Science and Technology;2016
3. Highly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-05
4. Spatially varied orientation selective epitaxial growth of CeO2(100) and (110) regions on Si(100) substrates by reactive magnetron sputtering utilizing electron beam irradiation;Thin Solid Films;2012-07
5. Hybrid Orientation Substrate Fabrication Using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO2(100) and (110) Areas on Si(100) Substrates;ECS Transactions;2012-04-27
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