Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
1. Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
2. Electronic structure of InNxAs1−x alloys from tight-binding calculations
3. Band Gap Reduction in InAsN Alloys
4. GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
5. Band Anticrossing in GaInNAs Alloys
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots;Journal of Applied Physics;2012-04-15
2. MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications;Crystal Research and Technology;2011-11-17
3. Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing;physica status solidi (c);2009-06
4. Diffusion effect-induced InNAs films growth on GaAs (100) substrates by MOCVD;Physica B: Condensed Matter;2006-04
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