Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy
2. Molecular-beam epitaxial growth of InSb on GaAs and Si for infrared detector applications
3. Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layers
4. Growth of InSb films on a Si(001) substrate with Ge buffer layer
5. Growth temperature effect on the heteroepitaxy of InSb films on a Si(00l) substrate covered with Ge islands
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1. Study of n-Type InSb Thin Films Grown on Glass Substrate by Electron Beam Evaporation Technique;Proceedings of the National Academy of Sciences, India Section A: Physical Sciences;2012-05-22
2. Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy;Japanese Journal of Applied Physics;2012-02-20
3. Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy;Japanese Journal of Applied Physics;2012-02-01
4. Study of Gaussian distribution of inhomogeneous barrier height for n-InSb/p-GaAs heterojunction prepared by flash evaporation;Journal of Alloys and Compounds;2009-07
5. Crystal orientations of InSb films grown on a Si(111) substrate by inserting AlSb buffer layer;physica status solidi (c);2008-07
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