Growth kinetics study in halide chemical vapor deposition of SiC

Author:

Nigam S.,Chung H.J.,Polyakov A.Y.,Fanton M.A.,Weiland B.E.,Snyder D.W.,Skowronski M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Heat and Mass Transfer of Impinging Jet Flow with Shower Head Flow on a Heated Disc in a Cylindrical Flow Channel;Journal of the Japan Institute of Energy;2021-12-20

2. Silicon carbide;Single Crystals of Electronic Materials;2019

3. Stable and high-speed SiC bulk growth without dendrites by the HTCVD method;Journal of Crystal Growth;2016-08

4. Silicon Carbide Epitaxy;Handbook of Crystal Growth;2015

5. High-speed, high-quality crystal growth of 4H-SiC by high-temperature gas source method;Applied Physics Express;2014-05-02

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