Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties

Published:2016-03 Issue: Volume:437 Page:20-25
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Papadomanolaki E.,Bazioti C.,Kazazis S.A.,Androulidaki M.,Dimitrakopulos G.P.,Iliopoulos E.

Funder

European Union

National Strategic Reference Framework

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. Unusual properties of the fundamental band gap of InN

2. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

3. Design and characterization of GaN∕InGaN solar cells

4. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

5. Critical thickness calculations for InGaN/GaN

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of semiconductor alloys by computational modeling;Advances in Semiconductor Physics and Devices [Working Title];2023-11-15

2. Formation of a-type dislocations near the InGaN/GaN interface during post-growth processing of epitaxial structures;Journal of Applied Physics;2023-01-25

3. Vertical profiling of ultrafast carrier dynamics in partially strain relaxed and strained InGaN grown on GaN/sapphire template of different In composition;Applied Surface Science;2023-01

4. Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells;Crystals;2022-09-27

5. Study of the surface chemistry, surface morphology, optical, and structural properties of InGaN thin films deposited by RF magnetron sputtering;Applied Surface Science;2022-06

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