Control of the growth quality by optimizing the crucible structure for growth of large-sized SiC single crystal
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. N.J. Yang, B. Song, W.J. Wang, H. Li, Control of the temperature field by double induction coils for growth of large-sized SiC single crystals via the physical vapor transport technique, CrystEngComm 24 (2022) 3475–3480.
2. Development of high power SiC devices for rail traction power systems;Liu;J. Cryst. Growth,2019
3. Formation and evolution of micropipes in SiC crystals;Lin;CrystEngComm,2012
4. Control of 4H polytype of SiC crystals by moving up the crucible to adjust the temperature field of the growth interface;Gao;CrystEngComm,2019
5. Simple and quick enhancement of SiC bulk crystal growth using a newly developed crucible material;Nakamura;Appl. Phys. Express,2016
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2. Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method via Simulations;Crystals;2023-11-26
3. The Thermal Field Design of a 150 mm Sic Crystal Growth System by Numerical Simulation;Crystal Research and Technology;2023-10-11
4. Micropipe-Like Defects in the Expanded Diameter Region of 8 in. SiC Grown by Physical Vapor Transport;Crystal Growth & Design;2023-09-18
5. Corrigendum to “Control of the growth quality by optimizing the crucible structure for growth of large-sized SiC single crystal” [J. Cryst. Growth 600 (2022) 126929];Journal of Crystal Growth;2023-01
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