Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy

Published:2010-07 Issue:14 Volume:312 Page:2089-2092
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Buehl Trevor E.,LeBeau James M.,Stemmer Susanne,Scarpulla Michael A.,Palmstrøm Christopher J.,Gossard Arthur C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Thermal Conductivity Reduction and Thermoelectric Figure of Merit Increase by Embedding Nanoparticles in Crystalline Semiconductors

2. Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles

3. Near-infrared absorption and semimetal-semiconductor transition in 2nm ErAs nanoparticles embedded in GaAs and AlAs

4. Infrared surface plasmon resonances due to Er-V semimetallic nanoparticles in III-V semiconductor matrices

5. Self‐organizing growth of erbium arsenide quantum dots and wires in gallium arsenide by molecular beam epitaxy

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