Area selective epitaxy of InAs on GaAs(001) and GaAs(111)A by migration enhanced epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition
2. Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor‐phase epitaxy
3. Migration-Enhanced Epitaxy of GaAs and AlGaAs
4. Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxy
5. Area selective epitaxy of anti-dot structure of GaAs by solid source MBE
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