Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires-Reference-Cited by-同舟云学术

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Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires

Published:2010-12 Issue:24 Volume:312 Page:3592-3598
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hayashida Atsushi,Sato Takuya,Hara Shinjiro,Motohisa Junichi,Hiruma Kenji,Fukui Takashi

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. High Performance Silicon Nanowire Field Effect Transistors

2. Vertical surround-gated silicon nanowire impact ionization field-effect transistors

3. Vertical wrap-gated nanowire transistors

4. Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates

5. Few Electron Double Quantum Dots in InAs/InP Nanowire Heterostructures

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1. Effect of Al0.1Ga0.9As thickness on the structural, optical, thermal, and electrical properties of (Al0.1 Ga 0.9As)/GaAs heterojunctions;Micro and Nanostructures;2023-05

2. Understanding the vapor–liquid–solid growth and composition of ternary III–V nanowires and nanowire heterostructures;Journal of Physics D: Applied Physics;2017-10-12

3. Chapter 14: III–V Nanowires: Transistor and Photovoltaic Applications;Novel Compound Semiconductor Nanowires;2016-08-30

4. Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory;Nano Letters;2016-02-10

5. Evolution of GaAs nanowire geometry in selective area epitaxy;Applied Physics Letters;2015-03-30

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