X-ray study of antiphase domains and their stability in MBE grown GaP on Si-Reference-Cited by-同舟云学术

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X-ray study of antiphase domains and their stability in MBE grown GaP on Si

Published:2011-05 Issue:1 Volume:323 Page:409-412
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Létoublon A.,Guo W.,Cornet C.,Boulle A.,Véron M.,Bondi A.,Durand O.,Rohel T.,Dehaese O.,Chevalier N.,Bertru N.,Le Corre A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. III–V epitaxy on Si for photonics applications

2. First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE

3. Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(100) substrates

4. Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions

5. Ways to quantitatively detect antiphase disorder in GaP films grown on Si(001) by transmission electron microscopy

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Estimation of Asymmetrically Distributed Anti-phase Domains Ratio in GaAs/Si(100) Epitaxial Layers Using High Resolution X-Ray Diffraction;Springer Proceedings in Physics;2024

2. XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires;Nanomaterials;2021-04-09

3. Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy;physica status solidi (a);2020-11-02

4. Monolithic III/V integration on (001) Si substrate;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

5. A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon;Journal of Applied Crystallography;2019-07-24

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