GaN single crystals grown under moderate nitrogen pressure by a new flux: Ca3N2
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. InGaN/GaN/AiGaN-Based Laser Diodes with an Estimated Lifetime of Longer than 10,000 Hours
3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
4. Defect structure in selectively grown GaN films with low threading dislocation density
5. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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