Electrical properties of undoped and doped MOVPE-grown InAsSb
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. High Quality InAs1–ySby/InAs Multilayers for mid-IR Detectors
2. The metal-organic chemical vapor deposition growth and properties of InAsSb mid-infrared (3-6-μm) lasers and LEDs
3. Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy
4. The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor deposition
5. Transport coefficients of InAs epilayers
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1. Unusual phase-pure zinc blende and highly-crystalline As-rich InAs1−xSbx nanowires for high-mobility transistors;Journal of Materials Chemistry C;2020
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3. Room temperature operating InAsSb-based photovoltaic infrared sensors grown by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2017-04
4. High-purity InAs1-Sb epilayer grown by a LPE technique;Journal of Crystal Growth;2015-04
5. Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices;Applied Physics Letters;2014-01-06
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