Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
2. Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy
3. Extremely Flat Interfaces in InxGa1-xAs/Al0.3Ga0.7As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
4. Super-Flat Interfaces in Pseudomorphic InxGa1-xAs/Al0.28Ga0.72As Quantum Wells with High In Content (x=0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
5. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
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