In situ monitoring of the growth procedure of InAs layer by spectral reflectance
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
2. Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition
3. In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorption
4. Chemical trend observed in anisotropic surface reflectance spectra of MOVPE by surface photoabsorption
5. Spectroscopic ellipsometry applied for in-situ control of lattice matched III-V growth in MOVPE
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1. Real-time monitoring of InAs QD growth procedure on InP substrate by spectral reflectance;Applied Surface Science;2008-11
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