MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices-Reference-Cited by-同舟云学术

MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices

Published:2007-04 Issue: Volume:301-302 Page:951-954
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Akazawa Masamichi,Hasegawa Hideki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. MBE growth and applications of silicon interface control layers

2. Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy

3. Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer

4. Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires

5. I. Tamai, H. Hasegawa, in: Presented at the 14th International Conference on Molecular Beam Epitaxy, September 3–8, 2006, Tokyo, Japan, Paper MoP-52.

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