Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Fundamental energy gap of GaN from photoluminescence excitation spectra
2. Excitonic emissions from hexagonal GaN epitaxial layers
3. Biaxial strain dependence of exciton resonance energies in wurtzite GaN
4. Gallium vacancies and the yellow luminescence in GaN
5. Assignment of deep levels causing yellow luminescence in GaN
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1. Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by surface modification using the aluminum facepack technique;physica status solidi (c);2011-11-21
2. Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal–organic vapor phase epitaxy;Journal of Crystal Growth;2008-11
3. Fabrication of GaN-based Schottky-type light-emitting diodes for micropixels in flat-panel displays;physica status solidi (c);2008-05
4. Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
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