Interface analysis of InAs/GaSb superlattice grown by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. InAs/GaInSb superlattices as a promising material system for third generation infrared detectors
2. Uncooled operation of type-II InAs∕GaSb superlattice photodiodes in the midwavelength infrared range
3. Uncooled InAs∕GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range
4. Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
5. Spatial separation of carriers in InAs–GaSb superlattices
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1. Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy;Bulletin of the Lebedev Physics Institute;2023-09
2. Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices;ACS Applied Materials & Interfaces;2023-02-01
3. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform;Scientific Reports;2022-07-08
4. Investigating the physics of higher-order optical transitions in InAs/GaSb superlattices;Physical Review B;2021-08-09
5. Molecular-Beam Epitaxy of Antimonides for Optoelectronic Devices;Molecular Beam Epitaxy;2019-02-08
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