Properties of high k gate dielectric gadolinium oxide deposited on Si (1 0 0) by dual ion beam deposition (DIBD)-Reference-Cited by-同舟云学术

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Properties of high k gate dielectric gadolinium oxide deposited on Si (1 0 0) by dual ion beam deposition (DIBD)

Published:2004-09 Issue:1-2 Volume:270 Page:21-29
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhou Jian-Ping,Chai Chun-Lin,Yang Shao-Yan,Liu Zhi-Kai,Song Shu-Lin,Li Yan-Li,Chen Nuo-Fu

Funder

Major State Basic Research Development Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. The drive to miniaturization

2. Electrical characterization of Ta2O5 films deposited by laser reactive ablation of metallic Ta

3. High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure

4. Growth of TiO2 thin films on Si(100) substrates using single molecular precursors by metal organic chemical vapor deposition

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