A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal-Reference-Cited by-同舟云学术

A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal

Published:2005-04 Issue:3-4 Volume:276 Page:393-400
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Azuma Y.,Usami N.,Fujiwara K.,Ujihara T.,Nakajima K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. In-situ monitoring system of the position and temperature at the crystal–solution interface

2. Growth of Ge-rich SixGe1−x single crystal with uniform composition (x=0.02) on a compositionally graded crystal for use as GaAs solar cells

3. Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal–melt interface position for precise control of the growth temperature

4. Czochralski growth of Si- and Ge-rich SiGe single crystals

5. Segregation during the seeding process in the Czochralski growth of GeSi alloys

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