Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition

Published:2004-12 Issue:1-2 Volume:273 Page:79-85
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wu Jiejun,Li Dabing,Lu Yuan,Han Xiuxun,Li Jiemin,Wei Hongyuan,Kang Tingting,Wang Xiaohui,Liu Xianglin,Zhu Qinsheng,Wang Zhanguo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

2. Ultraviolet and violet GaN light emitting diodes on silicon

3. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy

4. Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

5. Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition;Chinese Physics Letters;2016-10

2. Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier;Chinese Physics Letters;2016-08

3. Investigation of the dual-wavelength light-emitting diodes with AlInGaN spectral adjustment layer based on the Al/In ratios;Superlattices and Microstructures;2015-07

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