Feasibility of III–V on-silicon strain relaxed substrates-Reference-Cited by-同舟云学术

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Feasibility of III–V on-silicon strain relaxed substrates

Published:2005-02 Issue:1-2 Volume:275 Page:157-166
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kostrzewa M.,Grenet G.,Regreny P.,Leclercq J.L.,Perreau P.,Jalaguier E.,Di Cioccio L.,Hollinger G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. New approach to grow pseudomorphic structures over the critical thickness

2. High‐performance InGaAs photodetectors on Si and GaAs substrates

3. Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates

4. Compliant effect in twist-bonded systems

5. Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on SrTiO3(001);Journal of Applied Physics;2010-05

2. Optically Active Defects in an InAsP/InP Quantum Well Monolithically Integrated on SrTiO3 (001);MRS Proceedings;2010

3. Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems;Physical Review B;2009-10-07

4. Twin formation during the growth of InP on SrTiO3;Applied Physics Letters;2009-06-08

5. Spontaneous compliance of the InP∕SrTiO3 heterointerface;Applied Physics Letters;2008-06-16

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