Electrical properties of InAs thin films grown directly on GaAs(100) substrates by MBE-Reference-Cited by-同舟云学术

Electrical properties of InAs thin films grown directly on GaAs(100) substrates by MBE

Published:2005-05 Issue:1-4 Volume:278 Page:614-618
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Geka Hirotaka,Shibasaki Ichiro,Okamoto Atsushi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Mass production of InAs Hall elements by MBE;Shibasaki;J. Crystal Growth,1997

2. I. Shibasaki, Growth of InSb and InAs thin films and their application as practical magnetic sensors, Proceedings of the 10th International Conference on Narrow Gap Semiconductors, IPAP Conference Series, vol. 2, 2001, p. 137.

3. I. Shibasaki, Y. Kanayama, T. Ito, F. Ichimori, K. Nagase, T. Yoshida, K. Harada, Highly sensitive thin-film InAs hall elements by MBE, Digest of Technical Papers, Transuducers1991, IEEE Press, New York, 1991, p. 1069.

4. I. Shibasaki, Y. Kanayama, K. Nagase, T. Ito, F. Ichimori, T. Yoshida, and K. Harada, Properties of the thin film InAs Hall elements by MBE, Technical Digest of the 10th Sensor Symposium, IEEJ, Tokyo, Japan, 1991, p. 113.

5. T. Yamamoto, T. Iwabuchi, T. Itou, Y. Kanayama, K. Nagase, T. Yoshida, F. Ichimori, I. Shibasaki, Properties of Si-doped InAs thin film Hall elements, Technical Digest of the 12th Sensor Symposium, IEEJ, Japan, 1994, p. 221.

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