Determination of nitrogen composition in GaNxAs1−x epilayer on GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP
2. Bowing parameter of the band-gap energy of GaNxAs1−x
3. GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
4. Band Anticrossing in GaInNAs Alloys
5. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03
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