Homo-buffer layer effects and single crystalline ZnO hetero-epitaxy on c-plane sapphire by a conventional RF magnetron sputtering
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Recent advances in ZnO materials and devices
2. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
3. Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy
4. Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy
5. Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization
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1. High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films;Materials Research Express;2017-09-07
2. Contrasting transparent conductive properties of ZnO films on amorphous and crystalline substrates in view of thickness dependence;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-12-30
3. Investigation of DTSeffect on r.f. magnetron sputtered ZnO thin films;Crystal Research and Technology;2016-02-23
4. Influence of homo buffer layer thickness on the quality of ZnO epilayers;Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy;2015-10
5. Hydrothermal epitaxial growth of ZnO films on sapphire substrates presenting epitaxial ZnAl2O4 buffer layers;Materials Chemistry and Physics;2014-03
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