Polytype stability in nitrogen-doped PVT—grown 2″—4H–SiC crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport
2. Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
3. Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
4. Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing
5. Structural instability of 4H–SiC polytype induced by n-type doping
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1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03
2. Effect of cerium impurity on the stable growth of the 4H-SiC polytype by the physical vapour transport method;Journal of Crystal Growth;2022-05
3. Silicon carbide;Single Crystals of Electronic Materials;2019
4. Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method;Materials Science;2016-05-19
5. Polytype inclusions and polytype stability in silicon-carbide crystals;Semiconductors;2016-04
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