Morphology and crystallinity of homoepitaxial (100)ZnTe: interplay between ad-atom stoichiometry and defects nucleation during MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor phase epitaxy
2. ZnTe pure green light-emitting diodes fabricated by thermal diffusion
3. Growth and Characterization of Large Diameter ZnTe Single Crystals
4. ZnCdTe/ZnTe Light Emitting Diodes with CdSe n-Type Contact Layers Grown on ZnTe Substrates by Molecular Beam Epitaxy
5. ZnTe-Based Light-Emitting-Diodes Grown on ZnTe Substrates by Molecular Beam Epitaxy
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1. Influence of source transport rate upon fractions of Mg and Se in Zn1-x Mgx Sey Te1-y layers grown by metalorganic vapor phase epitaxy;physica status solidi (c);2016-03-16
2. Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1−Mg Se Te1− layers grown at various substrate temperatures or dopant transport rates by MOVPE;Journal of Crystal Growth;2015-03
3. Surface morphologies and photoluminescence properties of undoped and P-doped ZnTe layers grown by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2013-05
4. Influence of source transport rate upon phosphorus doping of ZnTe layers grown by MOVPE method;physica status solidi (c);2012-05-08
5. Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE;Applied Surface Science;2012-01
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