Ab initio-based approach to elemental growth process on the InAs wetting layer grown on GaAs substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference40 articles.
1. Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange
2. Local Density of States in Zero-Dimensional Semiconductor Structures
3. Understanding the growth mode transition in InAs/GaAs(001) quantum dot formation
4. Atomistic Insights for InAs Quantum Dot Formation on GaAs(001) using STM within a MBE Growth Chamber
5. Heteroepitaxial growth of InAs on GaAs(001) by in situ STM located inside MBE growth chamber
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of surface structural change on adsorption behavior on InAs wetting layer surface grown on GaAs(001) substrate;Journal of Crystal Growth;2021-09
2. Atomistic behaviour of (n×3)-reconstructed areas of InAs–GaAs(001) surface at the growth condition;Journal of Crystal Growth;2017-11
3. Ab initio-based approach to novel behavior in semiconductor hetero-epitaxial growth;Journal of Crystal Growth;2017-11
4. Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth;Crystals;2017-02-09
5. Ab initio-Based Approach to Crystal Growth;Handbook of Crystal Growth;2015
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