Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE-Reference-Cited by-同舟云学术

Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE

Published:2013-02 Issue: Volume:364 Page:149-154
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Li Shunfeng,Wang Xue,Mohajerani Matin Sadat,Fündling Sönke,Erenburg Milena,Wei Jiandong,Wehmann Hergo-Heinrich,Waag Andreas,Mandl Martin,Bergbauer Werner,Strassburg Martin

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. GaN based nanorods for solid state lighting

2. Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials

3. GaN and LED structures grown on pre-patterned silicon pillar arrays

4. GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

5. Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

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